Samsung M4 70T5663CZ3-CE6 2GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

総合得点

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

総合得点

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

相違点仕様コメント

相違点

Samsung M4 70T5663CZ3-CE6 2GB

考慮すべき理由
Samsung M4 70T5663CZ3-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 17.6

テスト平均値

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

考慮すべき理由
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 69

周辺 -130% 低遅延
書き込み速度の高速化、GB/s

13.9 1,441.2

テスト平均値
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Samsung M4 70T5663CZ3-CE6 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

69 30
読み出し速度、GB/s

3,325.1 17.6
書き込み速度、GB/秒

1,441.2 13.9
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

525 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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