Samsung M471A5244BB0-CRC 4GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

総合得点

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

総合得点

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

相違点仕様コメント

相違点

Samsung M471A5244BB0-CRC 4GB

考慮すべき理由
Samsung M471A5244BB0-CRC 4GB

バグを報告する

Micron Technology 4ATF51264HZ-2G3B1 4GB

考慮すべき理由
Micron Technology 4ATF51264HZ-2G3B1 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

35 38

周辺 -9% 低遅延
読み出し速度の高速化、GB/s

14.8 14

テスト平均値
書き込み速度の高速化、GB/s

11.2 10.4

テスト平均値

仕様

技術仕様の完全リスト

Samsung M471A5244BB0-CRC 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

38 35
読み出し速度、GB/s

14.0 14.8
書き込み速度、GB/秒

10.4 11.2
メモリ帯域幅、mbps

19200 19200

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2055 2336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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