Samsung M471B5173DB0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

総合得点

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

相違点仕様コメント

相違点

Samsung M471B5173DB0-YK0 4GB

考慮すべき理由
Samsung M471B5173DB0-YK0 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 45

周辺 -61% 低遅延
読み出し速度の高速化、GB/s

13.8 12

テスト平均値
書き込み速度の高速化、GB/s

10.1 7.8

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5173DB0-YK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

45 28
読み出し速度、GB/s

12.0 13.8
書き込み速度、GB/秒

7.8 10.1
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1939 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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