takeMS International AG TMS2GB264D082-805G 2GB vs Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

総合得点

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

総合得点

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

相違点仕様コメント

相違点

takeMS International AG TMS2GB264D082-805G 2GB

考慮すべき理由
takeMS International AG TMS2GB264D082-805G 2GB

バグを報告する

読み出し速度の高速化、GB/s

5 18.6

テスト平均値

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

考慮すべき理由
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

22 46

周辺 -109% 低遅延
書き込み速度の高速化、GB/s

14.9 1,852.4

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

takeMS International AG TMS2GB264D082-805G 2GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 22
読み出し速度、GB/s

5,535.6 18.6
書き込み速度、GB/秒

1,852.4 14.9
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

858 3361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology BL16G32C16U4RL.M16FE 16GB

Crucial Technology BL16G32C16U4RL.M16FE 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Crucial Technology BL16G32C16U4R.16FE 16GB

Crucial Technology BL16G32C16U4R.16FE 16GB

G Skill Intl F3-14900CL9-4GBZL 4GB

G Skill Intl F3-14900CL9-4GBZL 4GB

Kingston KHX426C13/8G 8GB

Kingston KHX426C13/8G 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

King Tiger Technology Tigo-2400MHz-4G 4GB

King Tiger Technology Tigo-2400MHz-4G 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

SpecTek Incorporated 16G2666CL19 16GB

SpecTek Incorporated 16G2666CL19 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

Crucial Technology BLS16G4D240FSE.16FD 16GB