Kingston SNY1600S11-4G-EDEG 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Kingston SNY1600S11-4G-EDEG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Wynik ogólny

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

Wynik ogólny

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Różnice Specyfikacje Uwagi

Różnice

Kingston SNY1600S11-4G-EDEG 4GB

Powody do rozważenia
Kingston SNY1600S11-4G-EDEG 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Powody do rozważenia
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Większa szybkość odczytu, GB/s

11.9 9.4

Średnia wartość w badaniach
Większa szybkość zapisu, GB/s

7.5 5.1

Średnia wartość w badaniach

Specyfikacje

Pełna lista specyfikacji technicznych

Kingston SNY1600S11-4G-EDEG 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Główna charakterystyka

Typ pamięci

DDR3 DDR3
Opóźnienie w PassMark, ns

29 29
Prędkość odczytu, GB/s

9.4 11.9
Prędkość zapisu, GB/s

5.1 7.5
Szerokość pasma pamięci, mbps

12800 12800

Other

Opis

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Taktowanie / szybkość zegara

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Ranking PassMark (im więcej tym lepiej)

1432 2135

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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