Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-2800C16-8GRR 8GB

Pontuação geral

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Pontuação geral

G Skill Intl F4-2800C16-8GRR 8GB

G Skill Intl F4-2800C16-8GRR 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 78T3354BZ0-CCC 256MB

Razões a considerar
Samsung M3 78T3354BZ0-CCC 256MB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

2 18.6

Valor médio nos testes

G Skill Intl F4-2800C16-8GRR 8GB

Razões a considerar
G Skill Intl F4-2800C16-8GRR 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

26 46

Por volta de -77% menor latência
Velocidade de escrita mais rápida, GB/s

13.9 1,519.2

Valor médio nos testes
Maior largura de banda de memória, mbps

17000 3200

Por volta de 5.31 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2800C16-8GRR 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

46 26
Velocidade de leitura, GB/s

2,909.8 18.6
Velocidade de escrita, GB/s

1,519.2 13.9
Largura de banda de memória, mbps

3200 17000

Other

Descrição

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Tempos / Velocidade do relógio

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (Quanto mais, melhor)

241 3406

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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