Samsung M378T5663QZ3-CF7 2GB vs SK Hynix HMA81GS6DJR8N-XN 8GB

Pontuação geral

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Pontuação geral

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M378T5663QZ3-CF7 2GB

Razões a considerar
Samsung M378T5663QZ3-CF7 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

4 15.8

Valor médio nos testes

SK Hynix HMA81GS6DJR8N-XN 8GB

Razões a considerar
SK Hynix HMA81GS6DJR8N-XN 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

35 56

Por volta de -60% menor latência
Velocidade de escrita mais rápida, GB/s

12.4 1,813.5

Valor médio nos testes
Maior largura de banda de memória, mbps

25600 6400

Por volta de 4 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M378T5663QZ3-CF7 2GB

SK Hynix HMA81GS6DJR8N-XN 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

56 35
Velocidade de leitura, GB/s

4,387.7 15.8
Velocidade de escrita, GB/s

1,813.5 12.4
Largura de banda de memória, mbps

6400 25600

Other

Descrição

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Tempos / Velocidade do relógio

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (Quanto mais, melhor)

693 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Últimas comparações

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

G Skill Intl F4-3200C16-8GTZR 8GB

G Skill Intl F4-3200C16-8GTZR 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMK16GX4M2K4133C19 8GB

Corsair CMK16GX4M2K4133C19 8GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

G Skill Intl F3-1600C11-8GIS 8GB

G Skill Intl F3-1600C11-8GIS 8GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9905702-014.A00G 8GB

Kingston 9905702-014.A00G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB