Samsung M4 70T5663CZ3-CE6 2GB vs G Skill Intl F4-3200C16-4GRKD 4GB

Pontuação geral

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Pontuação geral

G Skill Intl F4-3200C16-4GRKD 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

Diferenças Especificações Comentários

Diferenças

Samsung M4 70T5663CZ3-CE6 2GB

Razões a considerar
Samsung M4 70T5663CZ3-CE6 2GB

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Velocidade de leitura mais rápida, GB/s

3 15.3

Valor médio nos testes

G Skill Intl F4-3200C16-4GRKD 4GB

Razões a considerar
G Skill Intl F4-3200C16-4GRKD 4GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

35 69

Por volta de -97% menor latência
Velocidade de escrita mais rápida, GB/s

12.5 1,441.2

Valor médio nos testes
Maior largura de banda de memória, mbps

17000 5300

Por volta de 3.21 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-3200C16-4GRKD 4GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

69 35
Velocidade de leitura, GB/s

3,325.1 15.3
Velocidade de escrita, GB/s

1,441.2 12.5
Largura de banda de memória, mbps

5300 17000

Other

Descrição

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Tempos / Velocidade do relógio

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (Quanto mais, melhor)

525 3090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

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