TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M378A5244CB0-CWE 4GB

Pontuação geral

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Pontuação geral

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

Diferenças Especificações Comentários

Diferenças

TwinMOS 8DPT5MK8-TATP 2GB

Razões a considerar
TwinMOS 8DPT5MK8-TATP 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

3 16.7

Valor médio nos testes

Samsung M378A5244CB0-CWE 4GB

Razões a considerar
Samsung M378A5244CB0-CWE 4GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

34 53

Por volta de -56% menor latência
Velocidade de escrita mais rápida, GB/s

12.3 1,590.1

Valor médio nos testes
Maior largura de banda de memória, mbps

25600 6400

Por volta de 4 maior largura de banda

Especificações

Lista completa de especificações técnicas

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M378A5244CB0-CWE 4GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

53 34
Velocidade de leitura, GB/s

3,726.4 16.7
Velocidade de escrita, GB/s

1,590.1 12.3
Largura de banda de memória, mbps

6400 25600

Other

Descrição

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Tempos / Velocidade do relógio

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (Quanto mais, melhor)

522 2584

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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