A-DATA Technology AD4S3200316G22-BHYD 16GB vs G Skill Intl F4-3466C16-8GTZKW 8GB

总分

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

总分

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

差异规格评论

差异

A-DATA Technology AD4S3200316G22-BHYD 16GB

需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB

报告一个错误

更快的写入速度，GB/s

13.2 12.6

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-3466C16-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 66

左右 -136% 更低的延时
更快的读取速度，GB/s

17.5 13.9

测试中的平均数值

规格

完整的技术规格清单

A-DATA Technology AD4S3200316G22-BHYD 16GB

G Skill Intl F4-3466C16-8GTZKW 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

66 28
读取速度，GB/s

13.9 17.5
写入速度，GB/s

13.2 12.6
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2429 3104

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMT64GX4M4K3600C16 16GB

Corsair CMT64GX4M4K3600C16 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston KHX2666C16/16G 16GB

Kingston KHX2666C16/16G 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Kingston KF2933C17S4/16G 16GB

Kingston KF2933C17S4/16G 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB