A-DATA Technology AD73I1B1672EG 2GB vs Samsung M378A1K43BB1-CPB 8GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

Samsung M378A1K43BB1-CPB 8GB

Samsung M378A1K43BB1-CPB 8GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 35

左右 26% 更低的延时

Samsung M378A1K43BB1-CPB 8GB

需要考虑的原因
Samsung M378A1K43BB1-CPB 8GB

报告一个错误

更快的读取速度，GB/s

14.9 12.2

测试中的平均数值
更快的写入速度，GB/s

10.1 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

Samsung M378A1K43BB1-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 35
读取速度，GB/s

12.2 14.9
写入速度，GB/s

8.5 10.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1677 2613

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GS7AFR8N-UH 16GB

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G Skill Intl F4-3600C17-16GTZKW 16GB

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G Skill Intl F4-3600C16-8GTZ 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F4-2400C17-8GNT 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB