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A-DATA Technology AD73I1C1674EV 4GB
Corsair CMD16GX4M4B3000C15 4GB

A-DATA Technology AD73I1C1674EV 4GB vs Corsair CMD16GX4M4B3000C15 4GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Corsair CMD16GX4M4B3000C15 4GB

Corsair CMD16GX4M4B3000C15 4GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
Corsair CMD16GX4M4B3000C15 4GB 需要考虑的原因
Corsair CMD16GX4M4B3000C15 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 40
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMD16GX4M4B3000C15 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 34
  • 读取速度，GB/s
    11.3 left arrow 15.3
  • 写入速度，GB/s
    7.5 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 2960

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Corsair CMD16GX4M4B3000C15 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMD8GX3M2A2933C12 4GB
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
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Kingston KHX2666C13D4/8GX 8GB
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A-DATA Technology DQVE1908 512MB
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Hexon Technology Pte Ltd HEXON 1GB
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Essencore Limited IM44GU48N24-FFFHA0 4GB
内存RAM
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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Micron Technology 8ATF1G64AZ-2G3B1 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Shenzen Recadata Storage Technology 8GB
内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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A-DATA Technology AO2P26KC8T1-BPYS 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G13332 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Micron Technology AFSD416ES1P 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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G Skill Intl F4-3600C18-32GTZN 32GB
内存RAM