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A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3600C18-32GTZR 32GB

A-DATA Technology AD73I1C1674EV 4GB vs G Skill Intl F4-3600C18-32GTZR 32GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F4-3600C18-32GTZR 32GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
G Skill Intl F4-3600C18-32GTZR 32GB 需要考虑的原因
G Skill Intl F4-3600C18-32GTZR 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 40
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 30
  • 读取速度，GB/s
    11.3 left arrow 17.5
  • 写入速度，GB/s
    7.5 left arrow 16.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 3837

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

G Skill Intl F4-3600C18-32GTZR 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CM4X4GD3000C15K4 4GB
Corsair CM4X4GD3000C15K4 4GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9905622-055.A00G 4GB
Kingston 9905622-055.A00G 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Kingston ACR32D4U2S8HD-8X 8GB
Kingston ACR32D4U2S8HD-8X 8GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston LV32D4U2S8HD-8X 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905624-010.A00G 4GB
Kingston 9905624-010.A00G 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-4000C19-8GTZKW 8GB
G Skill Intl F4-4000C19-8GTZKW 8GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Kingston 9965589-008.D02G 8GB
Kingston 9965589-008.D02G 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Micron Technology AFSD416ES1P 16GB
Micron Technology AFSD416ES1P 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM