A-DATA Technology AD73I1C1674EV 4GB vs Samsung M378A1K43BB2-CRC 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Samsung M378A1K43BB2-CRC 8GB

需要考虑的原因
Samsung M378A1K43BB2-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 40

左右 -11% 更低的延时
更快的读取速度，GB/s

14.7 11.3

测试中的平均数值
更快的写入速度，GB/s

10.0 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Samsung M378A1K43BB2-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 36
读取速度，GB/s

11.3 14.7
写入速度，GB/s

7.5 10.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1654 2490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW32GX4M4Z2933C16 8GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Kingston KHX2666C16S4/16G 16GB

Kingston KHX2666C16S4/16G 16GB