A-DATA Technology AD73I1C1674EV 4GB vs Samsung M378A1K43DB2-CVF 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Samsung M378A1K43DB2-CVF 8GB

需要考虑的原因
Samsung M378A1K43DB2-CVF 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 40

左右 -33% 更低的延时
更快的读取速度，GB/s

15.2 11.3

测试中的平均数值
更快的写入速度，GB/s

11.8 7.5

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Samsung M378A1K43DB2-CVF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 30
读取速度，GB/s

11.3 15.2
写入速度，GB/s

7.5 11.8
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1654 2913

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F4-2666C19-8GNT 8GB

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Kingston 9965525-140.A00LF 8GB

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Apacer Technology 78.C1GQB.4032B 8GB

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G Skill Intl F4-3600C16-8GTZ 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BL16G32C16U4R.16FE 16GB

Kingston KHX1866C10D3/8GX 8GB

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G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Netac Technology Co Ltd E40832A 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB