A-DATA Technology AD73I1C1674EV 4GB vs Samsung M378A2G43BB3-CWE 16GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Samsung M378A2G43BB3-CWE 16GB

需要考虑的原因
Samsung M378A2G43BB3-CWE 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 40

左右 -5% 更低的延时
更快的读取速度，GB/s

17.9 11.3

测试中的平均数值
更快的写入速度，GB/s

10.4 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Samsung M378A2G43BB3-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 38
读取速度，GB/s

11.3 17.9
写入速度，GB/s

7.5 10.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1654 3030

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-3200C16-8GRS 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Team Group Inc. Team-Elite-1333 4GB

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SK Hynix HMA451U6MFR8N-TF 4GB

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Kingston 99U5428-101.A00LF 8GB

G Skill Intl F4-3000C15-8GRK 8GB

G Skill Intl F4-3000C15-8GRK 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-2400C17-8GVR 8GB

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Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F4-3600C14-16GTRG 16GB