A-DATA Technology ADOVE1A0834E 1GB vs Corsair CMT16GX4M2C3600C18 8GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Corsair CMT16GX4M2C3600C18 8GB

Corsair CMT16GX4M2C3600C18 8GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Corsair CMT16GX4M2C3600C18 8GB

需要考虑的原因
Corsair CMT16GX4M2C3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 94

左右 -236% 更低的延时
更快的读取速度，GB/s

20.9 1

测试中的平均数值
更快的写入速度，GB/s

16.9 1,165.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMT16GX4M2C3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 28
读取速度，GB/s

1,882.0 20.9
写入速度，GB/s

1,165.4 16.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

305 3835

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3333C16-8GTZSK 8GB

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Kingston KHX1600C9D3/8G 8GB

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Crucial Technology CT16G4SFS8266.C8FB 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston ACR26D4S9S1KA-4 4GB

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SK Hynix HMA851S6CJR6N-VK 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kllisre M378A5143EB2-CRC 4GB

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Kingston HX318C10FK/4 4GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMU32GX4M4D3000C16 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Avant Technology W641GU48J7240ND 8GB