A-DATA Technology ADOVE1A0834E 1GB vs Corsair CMWX16GC3000C16W4D 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Corsair CMWX16GC3000C16W4D 16GB

Corsair CMWX16GC3000C16W4D 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Corsair CMWX16GC3000C16W4D 16GB

需要考虑的原因
Corsair CMWX16GC3000C16W4D 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 94

左右 -248% 更低的延时
更快的读取速度，GB/s

18.1 1

测试中的平均数值
更快的写入速度，GB/s

15.7 1,165.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMWX16GC3000C16W4D 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 27
读取速度，GB/s

1,882.0 18.1
写入速度，GB/s

1,165.4 15.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

305 3845

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Kingmax Semiconductor GZAG43F-18---------- 8GB