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A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Crucial Technology BL8G36C16U4RL.M8FE1 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Crucial Technology BL8G36C16U4RL.M8FE1 8GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Crucial Technology BL8G36C16U4RL.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 94
    左右 -262% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.9 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 26
  • 读取速度，GB/s
    1,882.0 left arrow 19.7
  • 写入速度，GB/s
    1,165.4 left arrow 16.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3706

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Apacer Technology 78.C1GMM.AUW0C 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
SK Hynix HMA81GU7AFR8N-UH 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2800C15-8GTXG 8GB
G Skill Intl F4-2800C15-8GTXG 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9965596-019.B01G 4GB
Kingston 9965596-019.B01G 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3000C16-16GSXFB 16GB
G Skill Intl F4-3000C16-16GSXFB 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston KHX2400C12D4/4GX 4GB
Kingston KHX2400C12D4/4GX 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
内存RAM
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
内存RAM