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A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Crucial Technology CT8G4SFRA266.C8FD1 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Crucial Technology CT8G4SFRA266.C8FD1 8GB

Crucial Technology CT8G4SFRA266.C8FD1 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Crucial Technology CT8G4SFRA266.C8FD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFRA266.C8FD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 94
    左右 -161% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 36
  • 读取速度，GB/s
    1,882.0 left arrow 15.0
  • 写入速度，GB/s
    1,165.4 left arrow 10.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2700

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Crucial Technology CT8G4SFRA266.C8FD1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Samsung M386A4G40DM0-CPB 32GB
Samsung M386A4G40DM0-CPB 32GB
内存RAM
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Ramaxel Technology RMT3170EB68E9W1600 4GB
Ramaxel Technology RMT3170EB68E9W1600 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kllisre M378A1K43BB2-CRC 8GB
Kllisre M378A1K43BB2-CRC 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM
Kingston 9905403-442.A00LF 4GB
Kingston 9905403-442.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Transcend Information AQD-D4U4GN21-SG 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
A-DATA Technology DDR4 2800 8GB
A-DATA Technology DDR4 2800 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix HMA41GR7AFR8N-TF 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3000C16-8GVSB 8GB
G Skill Intl F4-3000C16-8GVSB 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston KHX2666C15S4/8G 8GB
Kingston KHX2666C15S4/8G 8GB
内存RAM