A-DATA Technology ADOVE1A0834E 1GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

A-DATA Technology ADOVE1A0834E 1GB vs Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

报告一个错误

低于PassMark测试中的延时，ns

22 94

左右 -327% 更低的延时
更快的读取速度，GB/s

18.2 1

测试中的平均数值
更快的写入速度，GB/s

15.6 1,165.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 22
读取速度，GB/s

1,882.0 18.2
写入速度，GB/s

1,165.4 15.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

305 3515

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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A-DATA Technology DQVE1908 512MB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

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Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

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Kingston 9905624-051.A00G 8GB