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A-DATA Technology ADOVE1A0834E 1GB
Kingston KHX3600C17D4/8GX 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Kingston KHX3600C17D4/8GX 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Kingston KHX3600C17D4/8GX 8GB 需要考虑的原因
Kingston KHX3600C17D4/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 94
    左右 -236% 更低的延时
  • 更快的读取速度，GB/s
    18.8 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.1 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Kingston KHX3600C17D4/8GX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 28
  • 读取速度，GB/s
    1,882.0 left arrow 18.8
  • 写入速度，GB/s
    1,165.4 left arrow 16.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3664

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Kingston KHX3600C17D4/8GX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-4000C17-16GTRGB 16GB
G Skill Intl F4-4000C17-16GTRGB 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
Corsair CMSX16GX4M1A2666C18 16GB
Corsair CMSX16GX4M1A2666C18 16GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Apacer Technology 78.CAGPN.DF40B 8GB
Apacer Technology 78.CAGPN.DF40B 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-2400C16-8GFT 8GB
G Skill Intl F4-2400C16-8GFT 8GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F4-2400C16-16GFXR 16GB
G Skill Intl F4-2400C16-16GFXR 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM