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A-DATA Technology ADOVE1A0834E 1GB
Kllisre M378A5143EB2-CRC 4GB

A-DATA Technology ADOVE1A0834E 1GB vs Kllisre M378A5143EB2-CRC 4GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Kllisre M378A5143EB2-CRC 4GB 需要考虑的原因
Kllisre M378A5143EB2-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 94
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    11.1 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.9 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Kllisre M378A5143EB2-CRC 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 47
  • 读取速度，GB/s
    1,882.0 left arrow 11.1
  • 写入速度，GB/s
    1,165.4 left arrow 7.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    305 left arrow 1967

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Kllisre M378A5143EB2-CRC 4GB RAM的比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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