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A-DATA Technology ADOVE1A0834E 1GB
Nanya Technology NT1GT64U8HB0BN-3C 1GB

A-DATA Technology ADOVE1A0834E 1GB vs Nanya Technology NT1GT64U8HB0BN-3C 1GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Nanya Technology NT1GT64U8HB0BN-3C 1GB

Nanya Technology NT1GT64U8HB0BN-3C 1GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
  • 更高的内存带宽，mbps
    6400 left arrow 5300
    左右 1.21% 更高的带宽
Nanya Technology NT1GT64U8HB0BN-3C 1GB 需要考虑的原因
Nanya Technology NT1GT64U8HB0BN-3C 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    67 left arrow 94
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    1,338.6 left arrow 1,165.4
    测试中的平均数值

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Nanya Technology NT1GT64U8HB0BN-3C 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    94 left arrow 67
  • 读取速度，GB/s
    1,882.0 left arrow 3,206.2
  • 写入速度，GB/s
    1,165.4 left arrow 1,338.6
  • 内存带宽，mbps
    6400 left arrow 5300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 667 MHz
  • 排名PassMark (越多越好)
    305 left arrow 447

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Nanya Technology NT1GT64U8HB0BN-3C 1GB RAM的比较

Kingston KVR24N17S8/4 4GB
KingSpec KingSpec 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Nanya Technology NT1GT64U8HB0BN-3C 1GB
Nanya Technology NT1GT64U8HB0BN-3C 1GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Kingston 99U5700-027.A00G 8GB
Kingston 99U5700-027.A00G 8GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Corsair CMK16GX4M4A2400C14 4GB
Corsair CMK16GX4M4A2400C14 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
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A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CM4B4G1J2400A14K 4GB
Corsair CM4B4G1J2400A14K 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3200C15-16GTZ 16GB
G Skill Intl F4-3200C15-16GTZ 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
内存RAM