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A-DATA Technology ADOVE1A0834E 1GB
Samsung M471A4G43AB1-CWE 32GB

A-DATA Technology ADOVE1A0834E 1GB vs Samsung M471A4G43AB1-CWE 32GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Samsung M471A4G43AB1-CWE 32GB 需要考虑的原因
Samsung M471A4G43AB1-CWE 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 94
    左右 -109% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Samsung M471A4G43AB1-CWE 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 45
  • 读取速度，GB/s
    1,882.0 left arrow 15.6
  • 写入速度，GB/s
    1,165.4 left arrow 12.8
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2925

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Samsung M471A4G43AB1-CWE 32GB RAM的比较

Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M471A4G43AB1-CWE 32GB
Samsung M471A4G43AB1-CWE 32GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Maxsun MSD44G24Q0 4GB
Maxsun MSD44G24Q0 4GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston XCCT36-MIE 16GB
Kingston XCCT36-MIE 16GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Apacer Technology 78.CAGR4.DFC0B 8GB
Apacer Technology 78.CAGR4.DFC0B 8GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
G Skill Intl F4-4000C18-32GTZN 32GB
G Skill Intl F4-4000C18-32GTZN 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT4GC64B8HB0NF-CG 4GB
Nanya Technology NT4GC64B8HB0NF-CG 4GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMW16GX4M1Z3600C18 16GB
Corsair CMW16GX4M1Z3600C18 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Apacer Technology 78.CAGPW.40C0B 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
内存RAM
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
Corsair CMW32GX4M2E3200C16 16GB
Corsair CMW32GX4M2E3200C16 16GB
内存RAM