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A-DATA Technology ADOVE1A0834E 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

A-DATA Technology ADOVE1A0834E 1GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB 需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    73 left arrow 94
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.9 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 73
  • 读取速度，GB/s
    1,882.0 left arrow 15.1
  • 写入速度，GB/s
    1,165.4 left arrow 7.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    305 left arrow 1724

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
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Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
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Kingston 9965690-002.A00G 8GB
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Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Apacer Technology 78.C2GFA.AF30B 8GB
Apacer Technology 78.C2GFA.AF30B 8GB
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Samsung M378B5773CH0-CH9 2GB
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Crucial Technology BLS8G4D240FSE.16FAR 8GB
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Samsung M378A1K43BB1-CPB 8GB
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G Skill Intl F3-12800CL7-4GBXM 4GB
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Kingston 9965525-140.A00LF 8GB
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Kllisre M471A3243BB0-CP50 16GB
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Samsung M471B5273EB0-CK0 4GB
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A-DATA Technology DDR4 2666 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
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内存RAM
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Samsung DDR3 8GB 1600MHz 8GB
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内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
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Kingston HP26D4U9S1ME-4 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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G Skill Intl F4-2666C15-8GVR 8GB
内存RAM