A-DATA Technology ADOVE1A0834E 1GB vs SK Hynix HMA81GR7AFR8N-UH 8GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

SK Hynix HMA81GR7AFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GR7AFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

57 94

左右 -65% 更低的延时
更快的读取速度，GB/s

9.4 1

测试中的平均数值
更快的写入速度，GB/s

7.6 1,165.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

SK Hynix HMA81GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 57
读取速度，GB/s

1,882.0 9.4
写入速度，GB/s

1,165.4 7.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

305 2170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-1600C9-4GAO 4GB

G Skill Intl F3-1600C9-4GAO 4GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Apacer Technology 78.CAGP7.AFW0C 8GB

Apacer Technology 78.CAGP7.AFW0C 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Corsair CMT32GX4M4C3466C16 8GB

Corsair CMT32GX4M4C3466C16 8GB

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

A-DATA Technology AM2P24HC8T1-BBFS 8GB

A-DATA Technology AM2P24HC8T1-BBFS 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston 9905624-036.A00G 8GB

Kingston 9905624-036.A00G 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

G Skill Intl F4-3400C16-8GSXW 8GB

G Skill Intl F4-3400C16-8GSXW 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB