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A-DATA Technology AM1L16BC8R2-B1NS 8GB
Crucial Technology CT8G3S160BM.C16FED 8GB

A-DATA Technology AM1L16BC8R2-B1NS 8GB vs Crucial Technology CT8G3S160BM.C16FED 8GB

总分
star star star star star
A-DATA Technology AM1L16BC8R2-B1NS 8GB

A-DATA Technology AM1L16BC8R2-B1NS 8GB

总分
star star star star star
Crucial Technology CT8G3S160BM.C16FED 8GB

Crucial Technology CT8G3S160BM.C16FED 8GB

差异 规格 评论

差异

A-DATA Technology AM1L16BC8R2-B1NS 8GB 需要考虑的原因
A-DATA Technology AM1L16BC8R2-B1NS 8GB
报告一个错误
Crucial Technology CT8G3S160BM.C16FED 8GB 需要考虑的原因
Crucial Technology CT8G3S160BM.C16FED 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.3 left arrow 9.0
    测试中的平均数值

规格

完整的技术规格清单
A-DATA Technology AM1L16BC8R2-B1NS 8GB
Crucial Technology CT8G3S160BM.C16FED 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    30 left arrow 27
  • 读取速度，GB/s
    12.2 left arrow 15.0
  • 写入速度，GB/s
    9.0 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2236 left arrow 2501

A-DATA Technology AM1L16BC8R2-B1NS 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Crucial Technology CT8G3S160BM.C16FED 8GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G3S186DM.C16FN 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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