A-DATA Technology AM2L16BC4R1-B0AS 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更快的读取速度，GB/s

16 13.4

测试中的平均数值
更快的写入速度，GB/s

12.5 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 24
读取速度，GB/s

13.4 16.0
写入速度，GB/s

7.8 12.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2181 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Essencore Limited KD4AGU880-36A180C 16GB

Essencore Limited KD4AGU880-36A180C 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology CT8G4SFS632A.M4FE 8GB

Crucial Technology CT8G4SFS632A.M4FE 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CMD8GX4M2B3000C15 4GB

Corsair CMD8GX4M2B3000C15 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMU16GX4M2A2400C16 8GB

Corsair CMU16GX4M2A2400C16 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-3466C18-8GSXW 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB