A-DATA Technology AM2L16BC4R1-B0AS 4GB vs UMAX Technology D4-3200-16G-1024X8-L 16GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

UMAX Technology D4-3200-16G-1024X8-L 16GB

UMAX Technology D4-3200-16G-1024X8-L 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

UMAX Technology D4-3200-16G-1024X8-L 16GB

需要考虑的原因
UMAX Technology D4-3200-16G-1024X8-L 16GB

报告一个错误

更快的读取速度，GB/s

18.6 13.4

测试中的平均数值
更快的写入速度，GB/s

14.6 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

UMAX Technology D4-3200-16G-1024X8-L 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

13.4 18.6
写入速度，GB/s

7.8 14.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2181 3217

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF2G64AZ-3G2E1 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Patriot Memory (PDP Systems) 3400 C16 Series 8GB

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AMD R5S38G1601U2S 8GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

Kingston KHX2666C16/8G 8GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Samsung M386A4G40DM0-CPB 32GB

Samsung M386A4G40DM0-CPB 32GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB