A-DATA Technology AM2L16BC4R1-B0CS 4GB vs Samsung M393A8K40B21-CTC 64GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

Samsung M393A8K40B21-CTC 64GB

Samsung M393A8K40B21-CTC 64GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 33% 更低的延时
更快的读取速度，GB/s

9.8 8.9

测试中的平均数值

Samsung M393A8K40B21-CTC 64GB

需要考虑的原因
Samsung M393A8K40B21-CTC 64GB

报告一个错误

更快的写入速度，GB/s

6.8 4.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Samsung M393A8K40B21-CTC 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 39
读取速度，GB/s

9.8 8.9
写入速度，GB/s

4.6 6.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1560 2011

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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G Skill Intl F5-6000J3636F16G 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3200C16-8GTZRX 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMD16GX4M2B3000C15 8GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMD32GX4M4A2666C16 8GB

Corsair CMD32GX4M4A2666C16 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F4-3400C16-8GTZKW 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston KHX3000C15D4/4GX 4GB

Kingston KHX3000C15D4/4GX 4GB