A-DATA Technology AM2U16BC4P2-B05B 4GB vs G Skill Intl F4-3200C16-16GTZKW 16GB

总分

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB

差异规格评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB

需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

G Skill Intl F4-3200C16-16GTZKW 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZKW 16GB

报告一个错误

更快的读取速度，GB/s

18.1 14

测试中的平均数值
更快的写入速度，GB/s

14.2 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-3200C16-16GTZKW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

14.0 18.1
写入速度，GB/s

9.1 14.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2330 3563

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM1P26KCST2-BABS 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N