A-DATA Technology AM2U16BC4P2-B05B 4GB vs OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

总分

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

差异规格评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB

需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 54

左右 52% 更低的延时

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

需要考虑的原因
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

报告一个错误

更快的读取速度，GB/s

15.2 14

测试中的平均数值
更快的写入速度，GB/s

14.3 9.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2U16BC4P2-B05B 4GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 54
读取速度，GB/s

14.0 15.2
写入速度，GB/s

9.1 14.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2330 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA81GS6CJR8N-UH 8GB

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Crucial Technology BL4G24C16U4B.8FE 4GB

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Samsung M378B5773CH0-CH9 2GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3000

Smart Modular SF564128CJ8N6NNSEG 4GB

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Patriot Memory (PDP Systems) PSD44G266682 4GB

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Kingston KVR16N11/8-SP 8GB

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Corsair CMSX32GX4M2A2666C18 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB