A-DATA Technology DDR2 800G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

A-DATA Technology DDR2 800G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

更快的读取速度，GB/s

5 11.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 49

左右 -58% 更低的延时
更快的写入速度，GB/s

8.1 2,343.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 31
读取速度，GB/s

5,135.8 11.8
写入速度，GB/s

2,343.1 8.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

843 2354

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Corsair CM4X16GD3200C16K4E 16GB

Corsair CM4X16GD3200C16K4E 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Corsair CMW32GX4M2Z3600C18 16GB

Corsair CMW32GX4M2Z3600C18 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB