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A-DATA Technology DDR3 1333G 2GB
Samsung V-GeN D4S4GL32A8TL 4GB

A-DATA Technology DDR3 1333G 2GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分
star star star star star
A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

总分
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异 规格 评论

差异

A-DATA Technology DDR3 1333G 2GB 需要考虑的原因
A-DATA Technology DDR3 1333G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 58
    左右 31% 更低的延时
Samsung V-GeN D4S4GL32A8TL 4GB 需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1333G 2GB
Samsung V-GeN D4S4GL32A8TL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 58
  • 读取速度，GB/s
    13.6 left arrow 18.5
  • 写入速度，GB/s
    7.8 left arrow 9.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2097 left arrow 1998

A-DATA Technology DDR3 1333G 2GB RAM的比较

Golden Empire CL5-5-5DDR2 1GB
A-DATA Technology DDR4 3200 2OZ 4GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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A-DATA Technology ADOVE1A0834E 1GB
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内存RAM
A-DATA Technology DQKD1A08 1GB
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内存RAM
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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内存RAM
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Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
内存RAM
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内存RAM
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内存RAM
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Corsair CMT16GX4M2C3200C14 8GB
内存RAM