A-DATA Technology DDR3 1600 4GB vs EVGA 16G-D4-2800-MR 4GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

更快的读取速度，GB/s

14 13.2

测试中的平均数值

EVGA 16G-D4-2800-MR 4GB

需要考虑的原因
EVGA 16G-D4-2800-MR 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 41

左右 -5% 更低的延时
更快的写入速度，GB/s

9.4 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

EVGA 16G-D4-2800-MR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 39
读取速度，GB/s

14.0 13.2
写入速度，GB/s

8.5 9.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMUA5110KE68H9F-2400 4GB

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Samsung M471B1G73QH0-YK0 8GB

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A-DATA Technology DDR3 1600 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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G Skill Intl F4-3600C19-16GSXK 16GB

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Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

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Corsair CMU64GX4M4D3000C16 16GB

Corsair CMU64GX4M4D3000C16 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMR16GX4M2C 8GB

A-DATA Technology DDR3 1600 4GB

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Corsair CM4B8G4J2400A16K2-ON 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3600C16-8GTRG 8GB

G Skill Intl F4-3600C16-8GTRG 8GB