A-DATA Technology DDR3 1866 2OZ 4GB vs Crucial Technology BLE8G4D26AFEA.16FAD 8GB

总分

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

差异规格评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 33

左右 36% 更低的延时
更快的读取速度，GB/s

17.8 16.4

测试中的平均数值

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FAD 8GB

报告一个错误

更快的写入速度，GB/s

12.1 10.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1866 2OZ 4GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 33
读取速度，GB/s

17.8 16.4
写入速度，GB/s

10.0 12.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2771 2988

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2400C15-8GRK 8GB

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A-DATA Technology DDR3 1600 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Corsair CMU32GX4M4C3000C15 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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AMD R538G1601U2S 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Kingston 99U5469-045.A00LF 4GB

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G Skill Intl F4-2400C16-8GIS 8GB

G Skill Intl F4-2400C16-8GIS 8GB

Kingston 99U5471-012.A00 4GB

Kingston 99U5471-012.A00 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB