RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DDR3 1866 2OZ 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
比较
A-DATA Technology DDR3 1866 2OZ 4GB vs Crucial Technology CT16G4DFD8266.C16FE 16GB
总分
A-DATA Technology DDR3 1866 2OZ 4GB
总分
Crucial Technology CT16G4DFD8266.C16FE 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
21
32
左右 34% 更低的延时
更快的读取速度,GB/s
17.8
16.6
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FE 16GB
报告一个错误
更快的写入速度,GB/s
13.7
10.0
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DDR3 1866 2OZ 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
21
32
读取速度,GB/s
17.8
16.6
写入速度,GB/s
10.0
13.7
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2771
3357
A-DATA Technology DDR3 1866 2OZ 4GB RAM的比较
A-DATA Technology DDR3 1600G 4GB
G Skill Intl F4-2133C15-8GRB 8GB
Crucial Technology CT16G4DFD8266.C16FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Peak Electronics 256X64M-67E 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
A-DATA Technology DDR3 1866 2OZ 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
V-GEN D4H8GL32A8TS 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMD16GX4M2B3200C16 8GB
AENEON AET760UD00-370B97X 1GB
Corsair CMT64GX4M8C3200C16 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3866C18-8GTZR 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-4GRR 4GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston K821PJ-MID 16GB
Samsung M378B5273EB0-CK0 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMW16GX4M2K4000C19 8GB
报告一个错误
×
Bug description
Source link