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A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology AX5U6000C4016G-B 16GB

A-DATA Technology DDR4 3000 2OZ 8GB vs A-DATA Technology AX5U6000C4016G-B 16GB

总分
star star star star star
A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

总分
star star star star star
A-DATA Technology AX5U6000C4016G-B 16GB

A-DATA Technology AX5U6000C4016G-B 16GB

差异 规格 评论

差异

A-DATA Technology DDR4 3000 2OZ 8GB 需要考虑的原因
A-DATA Technology DDR4 3000 2OZ 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 15.3
    测试中的平均数值
A-DATA Technology AX5U6000C4016G-B 16GB 需要考虑的原因
A-DATA Technology AX5U6000C4016G-B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 -14% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology AX5U6000C4016G-B 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR5
  • PassMark中的延时，ns
    32 left arrow 28
  • 读取速度，GB/s
    16.9 left arrow 15.3
  • 写入速度，GB/s
    13.1 left arrow 13.4
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    3196 left arrow 3501

A-DATA Technology DDR4 3000 2OZ 8GB RAM的比较

A-DATA Technology AD4S3200316G22-BHYD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AX5U6000C4016G-B 16GB RAM的比较

Corsair CMK32GX5M2B5200C40 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology AX5U6000C4016G-B 16GB
A-DATA Technology AX5U6000C4016G-B 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-2400C16-16GFT 16GB
G Skill Intl F4-2400C16-16GFT 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CM4X16GD3200C16K4E 16GB
Corsair CM4X16GD3200C16K4E 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM