A-DATA Technology DOVF1B163G2G 2GB vs Corsair CMWX8GD3200C16W4 8GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值

Corsair CMWX8GD3200C16W4 8GB

需要考虑的原因
Corsair CMWX8GD3200C16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 56

左右 -100% 更低的延时
更快的写入速度，GB/s

14.8 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Corsair CMWX8GD3200C16W4 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 28
读取速度，GB/s

4,315.2 17.9
写入速度，GB/s

1,925.7 14.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 3502

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Kingston KHX2400C14/16G 16GB

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Apacer Technology 78.01G86.9H50C 1GB

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Micron Technology 8ATF1G64HZ-2G3H1 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology CT8G4DFS824A.C8FAD1 8GB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

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Samsung M3 78T5663RZ3-CF7 2GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

V-GEN D4R8GL24A8R 8GB

V-GEN D4R8GL24A8R 8GB