A-DATA Technology DOVF1B163G2G 2GB vs G Skill Intl F4-3200C15-16GVK 16GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值

G Skill Intl F4-3200C15-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 56

左右 -65% 更低的延时
更快的写入速度，GB/s

12.6 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3200C15-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 34
读取速度，GB/s

4,315.2 14.9
写入速度，GB/s

1,925.7 12.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 3206

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M391A1K43BB1-CRC 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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G Skill Intl F4-2133C15-8GVK 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Smart Modular SF4641G8CKHI6DFSEG 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

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Kingston 9965525-155.A00LF 8GB

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Crucial Technology CT16G4SFD824A.M16FD 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB