A-DATA Technology DOVF1B163G2G 2GB vs Kingston ASU21D4U5S1MB-4 4GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Kingston ASU21D4U5S1MB-4 4GB

Kingston ASU21D4U5S1MB-4 4GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 12.7

测试中的平均数值

Kingston ASU21D4U5S1MB-4 4GB

需要考虑的原因
Kingston ASU21D4U5S1MB-4 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 56

左右 -107% 更低的延时
更快的写入速度，GB/s

9.0 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Kingston ASU21D4U5S1MB-4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 27
读取速度，GB/s

4,315.2 12.7
写入速度，GB/s

1,925.7 9.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 2071

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273DH0-CH9 4GB

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Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

Smart Modular SF4642G8CK8I8HLSBG 16GB

Smart Modular SF4642G8CK8I8HLSBG 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

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Terabyte Co Ltd RCX2-16G3000R 8GB

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INTENSO 5641160 8GB