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A-DATA Technology DOVF1B163G2G 2GB
Panram International Corporation L421008G4C1528K34O8A 8GB

A-DATA Technology DOVF1B163G2G 2GB vs Panram International Corporation L421008G4C1528K34O8A 8GB

总分
star star star star star
A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分
star star star star star
Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8GB

差异 规格 评论

差异

A-DATA Technology DOVF1B163G2G 2GB 需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.5
    测试中的平均数值
Panram International Corporation L421008G4C1528K34O8A 8GB 需要考虑的原因
Panram International Corporation L421008G4C1528K34O8A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 56
    左右 -155% 更低的延时
  • 更快的写入速度，GB/s
    12.8 left arrow 1,925.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
Panram International Corporation L421008G4C1528K34O8A 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 22
  • 读取速度，GB/s
    4,315.2 left arrow 17.5
  • 写入速度，GB/s
    1,925.7 left arrow 12.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    658 left arrow 3013

A-DATA Technology DOVF1B163G2G 2GB RAM的比较

ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB

Panram International Corporation L421008G4C1528K34O8A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston KHX3466C16D4/16GX 16GB
Kingston KHX3466C16D4/16GX 16GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-2400C16-8GRS 8GB
G Skill Intl F4-2400C16-8GRS 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
AMD R744G2606U1S 4GB
AMD R744G2606U1S 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2133C15-4GIS 4GB
G Skill Intl F4-2133C15-4GIS 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Heoriady HX2666CX15D4/4G 4GB
Heoriady HX2666CX15D4/4G 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2666C19-8GNT 8GB
G Skill Intl F4-2666C19-8GNT 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM