A-DATA Technology DQKD1A08 1GB vs AMD R744G2400U1S 4GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 16.7

测试中的平均数值

AMD R744G2400U1S 4GB

需要考虑的原因
AMD R744G2400U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 52

左右 -136% 更低的延时
更快的写入速度，GB/s

11.6 1,145.9

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

AMD R744G2400U1S 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 22
读取速度，GB/s

2,614.5 16.7
写入速度，GB/s

1,145.9 11.6
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

409 2862

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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PNY Electronics PNY 2GB

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A-DATA Technology DQKD1A08 1GB

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Panram International Corporation M424016 4GB

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Kingston 99U5474-010.A00LF 2GB

Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMR64GX4M4K3600C18 16GB

Corsair CMR64GX4M4K3600C18 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Corsair CMT32GX4M2Z3200C16 16GB

Corsair CMT32GX4M2Z3200C16 16GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3200C22-16GRS 16GB

G Skill Intl F4-3200C22-16GRS 16GB