RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB

A-DATA Technology DQKD1A08 1GB vs Crucial Technology BLS8G4D32AESBK.M8FE 8GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.1
    测试中的平均数值
Crucial Technology BLS8G4D32AESBK.M8FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 52
    左右 -93% 更低的延时
  • 更快的写入速度，GB/s
    14.6 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 4200
    左右 4.57 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 27
  • 读取速度，GB/s
    2,614.5 left arrow 18.1
  • 写入速度，GB/s
    1,145.9 left arrow 14.6
  • 内存带宽，mbps
    4200 left arrow 19200
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    409 left arrow 3446

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 99U5701-036.A00G 16GB
Kingston 99U5701-036.A00G 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Maxsun MSD44G24Q3 4GB
Maxsun MSD44G24Q3 4GB
内存RAM
Kingston 99P5471-016.A00LF 8GB
Kingston 99P5471-016.A00LF 8GB
Corsair CMK32GX4M2A2400C14 16GB
Corsair CMK32GX4M2A2400C14 16GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Corsair CMT128GX4M4C3200C16 32GB
Corsair CMT128GX4M4C3200C16 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Super Talent F24EA8GS 8GB
Super Talent F24EA8GS 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-16GSXWB 16GB
G Skill Intl F4-3200C16-16GSXWB 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905625-076.A00G 8GB
Kingston 9905625-076.A00G 8GB
内存RAM