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A-DATA Technology DQKD1A08 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

A-DATA Technology DQKD1A08 1GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

总分
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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16
    测试中的平均数值
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB 需要考虑的原因
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 52
    左右 -73% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 4200
    左右 6.1 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 30
  • 读取速度，GB/s
    2,614.5 left arrow 16.0
  • 写入速度，GB/s
    1,145.9 left arrow 10.6
  • 内存带宽，mbps
    4200 left arrow 25600
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    409 left arrow 3026

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
EXCELERAM EKBLACK4163016AD 8GB
EXCELERAM EKBLACK4163016AD 8GB
内存RAM
Team Group Inc. TEAMGROUP-UD3-2400 8GB
Team Group Inc. TEAMGROUP-UD3-2400 8GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMK16GX4M4B3300C16 4GB
Corsair CMK16GX4M4B3300C16 4GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2666C18-8GRS 8GB
G Skill Intl F4-2666C18-8GRS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GTRG 8GB
G Skill Intl F4-3200C14-8GTRG 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK8GX4M2B3200C16 4GB
Corsair CMK8GX4M2B3200C16 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
内存RAM