A-DATA Technology DQVE1908 512MB vs Corsair CMR32GX4M2C3000C15 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 19.8

测试中的平均数值

Corsair CMR32GX4M2C3000C15 16GB

需要考虑的原因
Corsair CMR32GX4M2C3000C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 66

左右 -144% 更低的延时
更快的写入速度，GB/s

16.0 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Corsair CMR32GX4M2C3000C15 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 27
读取速度，GB/s

2,775.5 19.8
写入速度，GB/s

1,557.9 16.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Kingston ACR26D4S9S1KA-4 4GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

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Samsung M378B5673EH1-CF8 2GB

Avant Technology W641GU48J7240ND 8GB

Avant Technology W641GU48J7240ND 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB