A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3600C16-8GTESC 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

G Skill Intl F4-3600C16-8GTESC 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTESC 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 66

左右 -113% 更低的延时
更快的读取速度，GB/s

20.3 2

测试中的平均数值
更快的写入速度，GB/s

18.2 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C16-8GTESC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 31
读取速度，GB/s

2,775.5 20.3
写入速度，GB/s

1,557.9 18.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3738

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 991988 (996988) 4GB

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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

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Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

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Kingston KHX1600C9S3L/4G 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Corsair CMK16GX4M2B3333C16 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB