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A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

A-DATA Technology DQVE1908 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.5
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 66
    左右 -120% 更低的延时
  • 更快的写入速度，GB/s
    9.0 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 30
  • 读取速度，GB/s
    2,775.5 left arrow 14.5
  • 写入速度，GB/s
    1,557.9 left arrow 9.0
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2374

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM的比较

Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
G Skill Intl F4-2400C16-4GFX 4GB
G Skill Intl F4-2400C16-4GFX 4GB
内存RAM
G Skill Intl F3-2400C10-8GTX 8GB
G Skill Intl F3-2400C10-8GTX 8GB
Kingston HP26D4U9D8HC-16X 16GB
Kingston HP26D4U9D8HC-16X 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston KHX2933C17D4/16G 16GB
Kingston KHX2933C17D4/16G 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMD32GX4M2A2666C15 16GB
Corsair CMD32GX4M2A2666C15 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-2666C19-32GNT 32GB
G Skill Intl F4-2666C19-32GNT 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KTP9W1-MIE 16GB
Kingston KTP9W1-MIE 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
内存RAM
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Team Group Inc. DDR4 2800 8GB
Team Group Inc. DDR4 2800 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A1K43CB1-CRCR 8GB
Samsung M471A1K43CB1-CRCR 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston HP26D4S9S8HJ-8 8GB
Kingston HP26D4S9S8HJ-8 8GB
内存RAM