A-DATA Technology DQVE1908 512MB vs Samsung M378A1K43CB2-CRC 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 15.4

测试中的平均数值

Samsung M378A1K43CB2-CRC 8GB

需要考虑的原因
Samsung M378A1K43CB2-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 66

左右 -94% 更低的延时
更快的写入速度，GB/s

10.7 1,557.9

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Samsung M378A1K43CB2-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 34
读取速度，GB/s

2,775.5 15.4
写入速度，GB/s

1,557.9 10.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

382 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Crucial Technology CT8G4DFS824A.M8FGM 8GB

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Crucial Technology BLS16G4S240FSD.16FAD 16GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK64GX4M4E3200C16 16GB

Corsair CMK64GX4M4E3200C16 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB